Three-Dimensional Semi-Dirac Semiconductor in a Distorted C <sub>60</sub> Solid with Gate-Tunable Quasi-1D Ultrahigh-Speed Transport

model and symmetry analysis, we establish the conceptual and material foundations for topological transistors, unveiling a cluster-assembly route to unite logic switching with ultrahigh-speed anisotropic transport.

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Publication Details

Journal
Nano Letters
Published
2026-04-07
DOI
https://doi.org/10.1021/acs.nanolett.6c00823
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Three-Dimensional Semi-Dirac Semiconductor in a Distorted C 60 Solid with Gate-Tunable Quasi-1D Ultrahigh-Speed Transport

Zhao Yang, Dekun Ma, Wei Ma, Dong Liu et al.
Nano Letters
Topological Materials and Phenomena
article

Three-Dimensional Semi-Dirac Semiconductor in a Distorted C 60 Solid with Gate-Tunable Quasi-1D Ultrahigh-Speed Transport

Zhao Yang, Dekun Ma, Wei Ma, Dong Liu, Zhiheng Lv
article en

Abstract

model and symmetry analysis, we establish the conceptual and material foundations for topological transistors, unveiling a cluster-assembly route to unite logic switching with ultrahigh-speed anisotropic transport.

Nano LettersVol. 26(15)
Inner Mongolia University (CN), Quantum Technologies (Sweden) (SE)
National Natural Science Foundation of China, Natural Science Foundation of Inner Mongolia
Openalex Percentile: Top 21%
Topological Materials and Phenomena
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