Anomalous hopping regime at the Mott transition from disordered semiconductor to disordered metal in Si-doped Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi/> <mml:mn>2</mml:mn> </mml:msub> </mml:math

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2026-04-07
DOI
https://doi.org/10.1103/khqm-bvwf
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Anomalous hopping regime at the Mott transition from disordered semiconductor to disordered metal in Si-doped Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi/> <mml:mn>2</mml:mn> </mml:msub> </mml:math

Anonymous
Physical review. B./Physical review. B
Ga2O3 and related materials
article

Anomalous hopping regime at the Mott transition from disordered semiconductor to disordered metal in Si-doped Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi/> <mml:mn>2</mml:mn> </mml:msub> </mml:math

Anonymous
article en

Abstract

No abstract available for this paper.
Physical review. B./Physical review. B
Openalex Percentile: Top 35%
Ga2O3 and related materials
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