Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics
/V·s in heavily doped layers, with further reductions at elevated temperatures due to thermally activated scattering and carrier redistribution. These results demonstrate that Raman spectroscopy is a powerful nondestructive tool to simultaneously assess electronic transport properties and crystalline disorder in vertical GaN-based power electronics.
Authors
- Camille Sonneville (ORCID: https://orcid.org/0000-0001-8094-5618)
- D. Machon
- Hassan Maher (ORCID: https://orcid.org/0000-0002-3827-2517)
- Dominique Planson
- Aomar Ezza
- Ali Soltani
- Eric Frayssinet
- Yvon Cordier
Institutions
- Université Claude Bernard Lyon 1 (FR)
- École Centrale de Lyon (FR)
- Centre National de la Recherche Scientifique (FR)
- Université de Sherbrooke (CA)
- Lyon College (US)
- Université de Lyon (FR)
- Centre de Nanosciences et de Nanotechnologies (FR)
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR)
- Laboratoire Ampère (FR)
- Institut National des Sciences Appliquées de Lyon (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-04-06
- DOI
- https://doi.org/10.1021/acsami.5c25852
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche
- Fonds de recherche du Québec