Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors
and p-type SnO transistors, showing its universality across percolative semiconductors regardless of the carrier type. These findings demonstrate that transport in amorphous semiconductor devices is defined by percolation-governed transport rather than conventional electrostatics or quantum confinement, and establish geometry as a key design parameter for future amorphous electronics.
Authors
- Shih-Chieh Chen
- X. Y. Bao
- Der‐Hsien Lien (ORCID: https://orcid.org/0000-0001-6774-2074)
- Chun-Chen Wang
- Shun‐Tsung Lo (ORCID: https://orcid.org/0000-0002-5002-1841)
- Yenyi Wu
- Z. Y. Li (ORCID: https://orcid.org/0009-0005-2211-2710)
- Ciao-Fen Chen
- Sung-Tsun Wang (ORCID: https://orcid.org/0000-0002-6537-9774)
- Wen-Hsiang Lu (ORCID: https://orcid.org/0000-0002-6330-1316)
- Nguyễn Thị Phương Thảo (ORCID: https://orcid.org/0000-0003-4739-5057)
- Yi-Hou Kuo
- Cheng-Chen Kuo
- Yi-Yu Pan
- Robert Tseng
- C. J. Wu
- Yu-Cheng Chan
- Chun-Liang Lin
- Emi Minamitan
Institutions
- Lawrence Berkeley National Laboratory (US)
- National Yang Ming Chiao Tung University (TW)
- University of California System (US)
- Sanken Electric (Japan) (JP)
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
- The University of Osaka (JP)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-04-06
- DOI
- https://doi.org/10.1021/acsnano.5c21838
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Taiwan Semiconductor Manufacturing Company
- National Science and Technology Council