On the contrast mechanism of scanning microwave impedance microscopy on buried and doped features

This work investigates the contrast mechanisms that govern scanning microwave impedance microscopy (sMIM) when applied to the characterization of advanced semiconductor devices. Systematic experiments were performed to evaluate how parameters such as tip-sample interaction, microwave excitation, and environmental conditions influence the sMIM response. The results provide insight into the relative contributions of dielectric and conductive components to the measured signal, clarifying the conditions that optimize imaging sensitivity and stability. Measurements on reference samples with buried oxide patterns and dopant calibration structures confirm sMIM’s ability to resolve nanoscale electrical variations beneath the surface. The study establishes sMIM as a powerful, nondestructive technique for mapping local electrical properties in three-dimensional and buried device architectures. These findings emphasize its relevance for semiconductor failure analysis, process monitoring, and future metrology standard development.