GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection

Jones alongside a fast response time of <60 µs were achieved. This approach presents a robust, cost-effective solution for extending the spectral range of Si-based photonics.

Authors

Publication Details

Journal
Optics Letters
Published
2026-04-06
DOI
https://doi.org/10.1364/ol.596692
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection

Haokun Ding, Li Jiang, Rui Wang, Cheng Li
Optics Letters
2D Materials and Applications
article

GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection

Haokun Ding, Li Jiang, Rui Wang, Cheng Li
article en

Abstract

Jones alongside a fast response time of <60 µs were achieved. This approach presents a robust, cost-effective solution for extending the spectral range of Si-based photonics.

Optics LettersVol. 51(9)
Openalex Percentile: Top 29%
2D Materials and Applications
DOISourceOpenAlex
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GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection — Haokun Ding, Li Jiang, et al. · Optics Letters (2026) | TGRS Research Map | TGRS