ReaxFF Molecular Dynamics Simulation and Experimental Validation of the Oxidation Mechanism of the C-Face of 6H-SiC Wafers under Different Hydroxyl Radical Concentrations
Authors
Jie Geng (ORCID: https://orcid.org/0000-0003-0422-0230)
Jiayun Deng (ORCID: https://orcid.org/0000-0001-5572-4389)
Shun Li (ORCID: https://orcid.org/0000-0003-4419-062X)
Xiaoning Wen
Xianglin Mu
Zilei Bai
Xueqin Pang
Junjiang Zhou
Institutions
Kunming University of Science and Technology (CN)
Faculty (United Kingdom) (GB)
Shanxi Provincial Institute of Chemical Industry (China) (CN)
Analysis and Testing Foundation of Kunming University of Science and Technology
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article
ReaxFF Molecular Dynamics Simulation and Experimental Validation of the Oxidation Mechanism of the C-Face of 6H-SiC Wafers under Different Hydroxyl Radical Concentrations
Jie Geng, Jiayun Deng, Shun Li, Xiaoning Wen et al.
Journal
Langmuir
Topics
Silicon Carbide Semiconductor Technologies
article
ReaxFF Molecular Dynamics Simulation and Experimental Validation of the Oxidation Mechanism of the C-Face of 6H-SiC Wafers under Different Hydroxyl Radical Concentrations
Kunming University of Science and Technology (CN), Faculty (United Kingdom) (GB), Shanxi Provincial Institute of Chemical Industry (China) (CN), ASM International (Finland) (FI), Zhejiang University (CN)
Funders
National Natural Science Foundation of China, Analysis and Testing Foundation of Kunming University of Science and Technology