Growth of MAPbI3 single crystals for radiation detection and sensor applications

This work investigates the growth, structural characteristics, and proof-of-concept radiation response of methylammonium lead iodide (MAPbI3) single crystals for direct x-ray and γ-ray detection. Large, optically clear MAPbI3 single crystals were synthesized using a modified cyclic inverse temperature crystallization (ITC) approach, enabling repeated growth within a single precursor solution under controlled thermal conditions. The resulting crystals exhibited well-defined faceted morphologies with dimensions ranging from millimeters to centimeters and high structural quality. Schottky barrier photodetectors fabricated using these crystals exhibited high photosensitivity (3.68 × 105 μC Gy−1 cm−2), a low detection limit (0.0114 μGy s−1), and excellent linearity under x-ray and γ-ray irradiation. The results demonstrate that cyclic ITC provides a reproducible and material-efficient pathway for producing high-quality MAPbI3 single crystals suitable for direct ionizing radiation detection.

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Publication Details

Journal
APL Electronic Devices
Published
2026-04-06
DOI
https://doi.org/10.1063/5.0311231
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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article

Growth of MAPbI3 single crystals for radiation detection and sensor applications

Ge Yang, Shams Noor
APL Electronic Devices
Advanced Semiconductor Detectors and Materials
article

Growth of MAPbI3 single crystals for radiation detection and sensor applications

Ge Yang, Shams Noor
article en

Abstract

This work investigates the growth, structural characteristics, and proof-of-concept radiation response of methylammonium lead iodide (MAPbI3) single crystals for direct x-ray and γ-ray detection. Large, optically clear MAPbI3 single crystals were synthesized using a modified cyclic inverse temperature crystallization (ITC) approach, enabling repeated growth within a single precursor solution under controlled thermal conditions. The resulting crystals exhibited well-defined faceted morphologies with dimensions ranging from millimeters to centimeters and high structural quality. Schottky barrier photodetectors fabricated using these crystals exhibited high photosensitivity (3.68 × 105 μC Gy−1 cm−2), a low detection limit (0.0114 μGy s−1), and excellent linearity under x-ray and γ-ray irradiation. The results demonstrate that cyclic ITC provides a reproducible and material-efficient pathway for producing high-quality MAPbI3 single crystals suitable for direct ionizing radiation detection.

APL Electronic DevicesVol. 2(2)
North Carolina State University (US)
Openalex Percentile: Top 32%
Advanced Semiconductor Detectors and Materials
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