Synergistic Experimental and Molecular Dynamics Study on the Si Ion Irradiation-Induced Mechanical Degradation in SiC Nanowires
irradiation. Experiments reveal a pronounced reduction in Young's modulus and fracture strength even at low doses (<0.2 dpa). MD simulations reveal distinct degradation mechanisms: strength is governed by surface-defect-induced stress concentration, whereas modulus decay results from the synergistic effects of surface amorphization and internal defect accumulation. A Tensile Core-Shell Model is established to quantify this evolution, revealing that interface-driven defect recombination thickens a mechanically ineffective shell while preserving the crystalline core. Notably, SiC NWs maintain brittle fracture across all doses and exhibit superior amorphization resistance. These findings link atomic-scale defects to macroscopic stiffness decay, providing a robust framework for predictive modeling and radiation-tolerant design of nanodevices.
Authors
- Mengxiong Liu
- Jie Wang
Institutions
- China University of Mining and Technology (CN)
- Space Micro (United States) (US)
- Tsinghua University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-06
- DOI
- https://doi.org/10.1021/acs.nanolett.6c00204
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China