Synergistic Experimental and Molecular Dynamics Study on the Si Ion Irradiation-Induced Mechanical Degradation in SiC Nanowires

irradiation. Experiments reveal a pronounced reduction in Young's modulus and fracture strength even at low doses (<0.2 dpa). MD simulations reveal distinct degradation mechanisms: strength is governed by surface-defect-induced stress concentration, whereas modulus decay results from the synergistic effects of surface amorphization and internal defect accumulation. A Tensile Core-Shell Model is established to quantify this evolution, revealing that interface-driven defect recombination thickens a mechanically ineffective shell while preserving the crystalline core. Notably, SiC NWs maintain brittle fracture across all doses and exhibit superior amorphization resistance. These findings link atomic-scale defects to macroscopic stiffness decay, providing a robust framework for predictive modeling and radiation-tolerant design of nanodevices.

Authors

Institutions

Publication Details

Journal
Nano Letters
Published
2026-04-06
DOI
https://doi.org/10.1021/acs.nanolett.6c00204
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Synergistic Experimental and Molecular Dynamics Study on the Si Ion Irradiation-Induced Mechanical Degradation in SiC Nanowires

Mengxiong Liu, Jie Wang
Nano Letters
Silicon Carbide Semiconductor Technologies
article

Synergistic Experimental and Molecular Dynamics Study on the Si Ion Irradiation-Induced Mechanical Degradation in SiC Nanowires

Mengxiong Liu, Jie Wang
article en

Abstract

irradiation. Experiments reveal a pronounced reduction in Young's modulus and fracture strength even at low doses (<0.2 dpa). MD simulations reveal distinct degradation mechanisms: strength is governed by surface-defect-induced stress concentration, whereas modulus decay results from the synergistic effects of surface amorphization and internal defect accumulation. A Tensile Core-Shell Model is established to quantify this evolution, revealing that interface-driven defect recombination thickens a mechanically ineffective shell while preserving the crystalline core. Notably, SiC NWs maintain brittle fracture across all doses and exhibit superior amorphization resistance. These findings link atomic-scale defects to macroscopic stiffness decay, providing a robust framework for predictive modeling and radiation-tolerant design of nanodevices.

Nano LettersVol. 26(14)
China University of Mining and Technology (CN), Space Micro (United States) (US), Tsinghua University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 26%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.