Wide tunability of zincblende InGaN/GaN quantum wells grown bymetal-organic vapor phase epitaxy

Abstract It is shown that for zincblende InGaN/GaN quantum wells produced by metal-organic vapor phase epitaxy, reducing the growth temperature from 740 °C to 684 °C tunes the emission from the blue to the orange region of the visible spectrum. The emission spectrum was found to be independent of the excitation density at each growth temperature, consistent with the quantum wells being free of significant internal polarisation fields. The spectrally integrated emission intensity at 300 K grows from 22 % to 34 % of its value at 11 K as the peak emission energy decreases from 2.75 eV to 2.0 eV; this reduction in thermal quenching as the emission energy decreases is attributed to a significant lessening of thermionic emission.