Stability of laser-induced 1T′-MoTe2

Phase engineering of two-dimensional transition metal dichalcogenides enables precise modulation of their electronic properties and holds great promise for next-generation electronic devices. However, achieving spatially controlled and reversible phase transitions reliably remains a key challenge for practical applications. Here, we demonstrate a localized and controllable phase transition from the semiconducting 2H to the metallic 1T′ phase in MoTe2 via laser irradiation. This transition, confirmed by Raman spectroscopy and atomic force microscopy, leads to a remarkable increase in conductivity, with the current response enhanced by up to three orders of magnitude. Furthermore, we reveal that the laser-induced 1T′ phase exhibits spontaneous reversion to the original 2H phase over time when stored under vacuum, accompanied by a corresponding decay in electrical conductance. This reversible and tunable phase-switching behavior highlights the potential of laser-controlled phase patterning for applications in reconfigurable electronics, particularly in memristive devices. Our work not only establishes a method for spatially defined phase engineering but also provides critical insights into the dynamics of phase stability, offering a foundation for the design of future controllable phase-change systems.