Efficient Carrier Tunneling and Weak Fermi-Level Pinning Enabled by Intrinsic Covalent-like Quasi-bonding Interactions in van der Waals Metal–Semiconductor Junctions

/WSTe junction can be tuned into a p-type ohmic contact under combined strain and electric field, achieving an ultralow resistance of 73.28-77.63 Ω·μm at the same carrier density. This work underscores the critical role of the inherent orbital characteristics of metal electrodes in interfacial coupling with 2D semiconductors, offering a key descriptor for selecting contact metals to obtain high-performance vdW 2D MSJs with an optimal balance between carrier tunneling efficiency and Fermi-level pinning.