Strain Metrology of GaN/AlN Heterostructures and Devices

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Publication Details

Journal
eCommons (Cornell University)
Published
2026-04-02
DOI
https://doi.org/10.7298/w6x7-sj76
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Strain Metrology of GaN/AlN Heterostructures and Devices

N. Veeraraghavan
eCommons (Cornell University)
GaN-based semiconductor devices and materials
article

Strain Metrology of GaN/AlN Heterostructures and Devices

N. Veeraraghavan
article en

Abstract

No abstract available for this paper.
eCommons (Cornell University)
Cornell University (US)
Openalex Percentile: Top 22%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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Strain Metrology of GaN/AlN Heterostructures and Devices — N. Veeraraghavan · eCommons (Cornell University) (2026) | TGRS Research Map | TGRS