Breakdown of Ohm’s Law by Disorders in Low-Dimensional Transistors
field-effect transistors. This work establishes a unified physical picture for understanding and optimizing disorder-driven electronic transport in low-dimensional transistors.
Authors
- Peide D. Ye (ORCID: https://orcid.org/0000-0001-8466-9745)
- Adam Charnas (ORCID: https://orcid.org/0000-0002-2282-4428)
- Linjia Long
- Jian-Yu Lin
- Zehao Lin
- Zhuocheng Zhang
- Chang Niu
Institutions
- Purdue University West Lafayette (US)
- Institute of Nanotechnology (GB)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-02
- DOI
- https://doi.org/10.1021/acs.nanolett.6c00645
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- Semiconductor Research Corporation
- Samsung