Fluorographane as an Atomic-Scale Non-Volatile Memory Substrate: 447 Terabytes per Square Centimetre at Zero Retention Energy

v34: First DFT computation of C–F inversion barrier (6.6 eV, B3LYP-D3BJ/def2-TZVP, fluorophenalane). Pyramidal inversion mechanism identified. Full degradation hierarchy added.

Authors

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-04-02
DOI
https://doi.org/10.5281/zenodo.19386993
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
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article

Fluorographane as an Atomic-Scale Non-Volatile Memory Substrate: 447 Terabytes per Square Centimetre at Zero Retention Energy

Ilia Toli
Zenodo (CERN European Organization for Nuclear Research)
Semiconductor materials and devices
article

Fluorographane as an Atomic-Scale Non-Volatile Memory Substrate: 447 Terabytes per Square Centimetre at Zero Retention Energy

Ilia Toli
article en

Abstract

v34: First DFT computation of C–F inversion barrier (6.6 eV, B3LYP-D3BJ/def2-TZVP, fluorophenalane). Pyramidal inversion mechanism identified. Full degradation hierarchy added.

Zenodo (CERN European Organization for Nuclear Research)
Affordable and clean energy
Openalex Percentile: Top 25%
Semiconductor materials and devices
DOIOpen Access PDFOpenAlex
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