Monolithic InGaN-based white-light-emitting diode with enhanced red, green, and blue color uniformity via an AlGaN cascade region

The advancement of phosphor-free white-light-emitting diodes (W-LEDs) is critical for next-generation solid-state lighting and display technologies. In this study, we propose a monolithic RGB InGaN-based LED structure incorporating cascade regions composed of compositionally graded and non-graded AlGaN interlayers to overcome inherent limitations in conventional W-LED designs, such as inefficient carrier distribution and spectral imbalance. Numerical simulations performed using Silvaco TCAD reveal enhanced carrier confinement and redistribution, leading to an 80% internal quantum efficiency (IQE) and a 12% increase in total emission intensity. The light emitted from the suggested W-LED structure has Commission Internationale de l’Eclairage (CIE) values of (0.31 and 0.31) at 222A/cm 2 (202 mA), which indicates a high-quality white-light emission.