Unveiling Rabi splitting in a hybrid plasmon–exciton polaritonic system for refractometry

We computationally report strong plasmon–exciton coupling and quantitative Rabi splitting in a hybrid plasmon–exciton polariton platform designed for ultrasensitive refractometric sensing. Strong coupling between surface plasmon polaritons in metal and excitonic transitions in an organic semiconductor gives rise to plexcitons, i.e., upper and lower plexciton modes, causing pronounced anti-crossing. Rabi splitting energies ranging from 0 to 250 meV are achieved by tuning the organic semiconductor layer thickness and analyte refractive index, confirming operation in the strong-coupling regime. The highly dispersive upper plexciton mode (at wavelength, λ = 532 nm) enables refractive index sensing across gaseous and aqueous environments. The incorporation of an ultra-thin silicon (Si) interlayer (∼5 nm) atop silver (Ag) results in maximum sensitivity of ∼252° per refractive index unit, with further tunability achieved by varying the Si thickness and the analyte refractive index. Therefore, this device establishes a tunable, high-performance polaritonic sensing platform and provides insight into plasmon–exciton coupling for advanced nanophotonic device applications.

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Publication Details

Journal
APL Electronic Devices
Published
2026-04-01
DOI
https://doi.org/10.1063/5.0320517
Primary Topic
Strong Light-Matter Interactions
Type
article
Field-Weighted Citation Impact
0.00

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article

Unveiling Rabi splitting in a hybrid plasmon–exciton polaritonic system for refractometry

Triranjita Srivastava, Subrat Sahu, Rajan Jha
APL Electronic Devices
Strong Light-Matter Interactions
article

Unveiling Rabi splitting in a hybrid plasmon–exciton polaritonic system for refractometry

Triranjita Srivastava, Subrat Sahu, Rajan Jha
article en

Abstract

We computationally report strong plasmon–exciton coupling and quantitative Rabi splitting in a hybrid plasmon–exciton polariton platform designed for ultrasensitive refractometric sensing. Strong coupling between surface plasmon polaritons in metal and excitonic transitions in an organic semiconductor gives rise to plexcitons, i.e., upper and lower plexciton modes, causing pronounced anti-crossing. Rabi splitting energies ranging from 0 to 250 meV are achieved by tuning the organic semiconductor layer thickness and analyte refractive index, confirming operation in the strong-coupling regime. The highly dispersive upper plexciton mode (at wavelength, λ = 532 nm) enables refractive index sensing across gaseous and aqueous environments. The incorporation of an ultra-thin silicon (Si) interlayer (∼5 nm) atop silver (Ag) results in maximum sensitivity of ∼252° per refractive index unit, with further tunability achieved by varying the Si thickness and the analyte refractive index. Therefore, this device establishes a tunable, high-performance polaritonic sensing platform and provides insight into plasmon–exciton coupling for advanced nanophotonic device applications.

APL Electronic DevicesVol. 2(2)
University of Allahabad (IN), Indian Institute of Technology Bhubaneswar (IN)
Council of Science and Technology, U.P.
Openalex Percentile: Top 30%
Strong Light-Matter Interactions
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