Revealing Asymmetric Off-State Drain/Source Stress Reliability and Mechanisms in IGZO-FETs
) dynamics and demonstrated that the interplay between electron detrapping and disorder-induced DoS reorganization within IGZO governs the observed asymmetric degradation. These findings highlight the critical impact of off-state stresses on IGZO-FET reliability and advance the fundamental understanding of amorphous oxide semiconductor behavior in 3D integration technologies.
Authors
- Yanbo Su
- Yibei Zhang (ORCID: https://orcid.org/0000-0002-6346-4422)
- Xiangpeng Liang (ORCID: https://orcid.org/0000-0001-5243-0457)
- Yue Xi (ORCID: https://orcid.org/0000-0003-2789-7674)
- Yuyao Lu (ORCID: https://orcid.org/0000-0001-9946-0469)
- Dong Wu (ORCID: https://orcid.org/0000-0002-2306-5769)
- M. K. Wu
- He Qian
- Zhixing Jiang
- Yijia Fan
- Ruofei Hu
- Kexin Wang
- Jianshi Tang
- Zhidong Tang
- Ting Liu
Institutions
- Fraunhofer Institute for Integrated Circuits (DE)
- Tsinghua University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-03-31
- DOI
- https://doi.org/10.1021/acs.nanolett.5c05938
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China