All-Oxide ITO/HZO/WO <sub> <i>x</i> </sub> Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing
cycles, and 64 well-resolved conductance states. The device further demonstrates stable spike-dependent plasticity and reliable analog weight modulation suitable for neuromorphic operation. Neural-network simulations based on experimentally extracted conductance characteristics achieve 91.5% accuracy on the MNIST data set, highlighting the potential of simple MFM FTJ synapses for scalable neuromorphic and in-memory computing hardware.
Authors
- Y.J. Choi
- Seungjoon Jeong (ORCID: https://orcid.org/0009-0009-9249-0353)
- Huiseong Shin
- Myeongjae Choi
- Hyeonjung Park
- Changwoo Han
- Changhwan Shin
- Junseok Kim
Institutions
- Samsung (South Korea) (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-03-31
- DOI
- https://doi.org/10.1021/acsami.6c00989
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea