Energy-level alignment of vacancy-ordered halide double perovskites

Vacancy-ordered double perovskites have emerged as lead-free alternatives, offering remarkable stability and compositional tunability for optoelectronic applications. In this study, we provide first-principles insights into their electronic properties, surface stability, and energy-level alignment using a non-empirical, dielectric-dependent hybrid functional. For a representative family of Cs2MX6 compounds, with M = Zr, Sn, or Te and X = Cl, Br, or I, our calculations reveal that the predicted bulk electronic bandgaps are in excellent agreement with those obtained using the state-of-the-art GW method, validating the accuracy of our approach. We investigate the stability of these materials under simulated experimental conditions, considering both the CsX-rich and CsX-poor chemical potentials of their precursor salts. Our results indicate distinct regions of surface energy stability that favor CsX terminations. In contrast, MX4 terminations show in-gap surface states, which can act as trap states and reduce carrier lifetime. Finally, based solely on the intrinsic absolute energy levels, we identify promising candidates as charge transport and injection layers for typical photovoltaic and light-emitting applications. This study provides a detailed map of energy-level alignment at Cs2MX6 surfaces, offering valuable design principles for the development of next-generation Cs2MX6-based optoelectronic devices.