High-Temperature Stable Amorphous Al <sub> 2– <i>x</i> </sub> (ZrY) <sub> <i>x</i> </sub> O <sub>3</sub> Thin Film Insulators: An Alternative to Crystalline Alumina
Authors
J. Fleig
Jakob Rath (ORCID: https://orcid.org/0000-0001-6581-4572)
Tobias M. Huber (ORCID: https://orcid.org/0000-0001-6339-8341)
A. Gies
Norma Salvadores Farran
T. Wojcik
S. Kolozsvari
Klaus Böbel
Peter Polcik
Jürgen Ramm
Helmut Riedl
Florentine Scholz
Institutions
TU Wien (AT)
Christian Doppler Laboratory for Thermoelectricity (AT)
High-Temperature Stable Amorphous Al 2– x (ZrY) x O 3 Thin Film Insulators: An Alternative to Crystalline Alumina
J. Fleig, Jakob Rath, Tobias M. Huber, A. Gies et al.
Journal
ACS Applied Materials & Interfaces
Topics
Copper Interconnects and Reliability
article
High-Temperature Stable Amorphous Al 2– x (ZrY) x O 3 Thin Film Insulators: An Alternative to Crystalline Alumina
J. Fleig, Jakob Rath, Tobias M. Huber, A. Gies, Norma Salvadores Farran, T. Wojcik, S. Kolozsvari, Klaus Böbel, Peter Polcik, Jürgen Ramm, Helmut Riedl, Florentine Scholz
article en
Abstract
No abstract available for this paper.
Publication Tag
ACS Applied Materials & InterfacesVol. 18(14)
Institutions
TU Wien (AT), Christian Doppler Laboratory for Thermoelectricity (AT), Oerlikon (Liechtenstein) (LI), Institute for Analytical Instrumentation (RU), Oerlikon (United States) (US), Plansee (Germany) (DE)