Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral ( <i>R3</i> ) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory

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Journal
ACS Applied Materials & Interfaces
Published
2026-04-01
DOI
https://doi.org/10.1021/acsami.5c23427
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral ( R3 ) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory

Cheng‐Hong Liu, Mochamad Januar, Abhijit Aich, J. H. Lee et al.
ACS Applied Materials & Interfaces
Ferroelectric and Negative Capacitance Devices
article

Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral ( R3 ) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory

Cheng‐Hong Liu, Mochamad Januar, Abhijit Aich, J. H. Lee, Siddheswar Maikap, Min-Hung Lee
article en

Abstract

No abstract available for this paper.
ACS Applied Materials & InterfacesVol. 18(14)
National Taiwan University (TW), Chang Gung University (TW), Keelung Chang Gung Memorial Hospital (TW), Thinfilm (Sweden) (SE)
Semiconductor Research Corporation, National Taiwan University, National Science and Technology Council
Openalex Percentile: Top 32%
Ferroelectric and Negative Capacitance Devices
DOIOpen Access PDFOpenAlex
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