Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites

illumination), we achieve up to six distinct, nonvolatile resistance levels within a single device. This work demonstrates that chiral perovskites are promising candidates for high-density multistate memory and novel spin-optoelectronic logic.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2026-04-01
DOI
https://doi.org/10.1021/acs.jpclett.6c00490
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites

Baorui Mao, Hangwen Guo, Ruiqing Li, Xuyang Sha et al.
The Journal of Physical Chemistry Letters
Advanced Memory and Neural Computing
article

Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites

Baorui Mao, Hangwen Guo, Ruiqing Li, Xuyang Sha, Jiakai Cai, Jiaying Feng
article en

Abstract

illumination), we achieve up to six distinct, nonvolatile resistance levels within a single device. This work demonstrates that chiral perovskites are promising candidates for high-density multistate memory and novel spin-optoelectronic logic.

The Journal of Physical Chemistry LettersVol. 17(15)
Sun Yat-sen University (CN), Fudan University (CN), Hefei University (CN), Quantum Devices (United States) (US), State Key Laboratory of Surface Physics
National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 30%
Advanced Memory and Neural Computing
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