Enthalpy‐Driven Microstructure Reconfiguration for High‐Performance Half‐Heusler Alloys

ABSTRACT Half‐Heusler (HH) alloys have attracted extensive attention due to their exceptional mechanical properties and high‐temperature thermal stability. However, simultaneously optimizing their power factor ( PF ) and figure of merit ( zT ) remains challenging due to the conflict of tuning electron and phonon behavior. Here, a microstructure reconfiguration strategy based on tuning the enthalpy‐dominated atomic chemical affinity is proposed to decouple electrical and thermal transport properties. The introduction of Yb into Hf‐doped ZrNiSn alloys weakens the d ‐ d orbital hybridization, which reduces the negative mixing enthalpy and diminishes the atomic affinity, thereby suppressing the formation of Hf precipitates. The Hf precipitates are transformed into superstructures, which promote the electron mobility with a 55% increase by eliminating the electron scattering around discontinuous lattices and introducing strong phonon scattering to suppres the thermal conductivity. Therefore, a “double‐high” Zr 0.66 Hf 0.3 Yb 0.04 NiSn 0.98 Sb 0.02 material with a high PF of 58 µW·cm − 1 ·K − 2 and a peak zT of 1.32 at 950 K was obtained, contributing to a high experimental conversion efficiency of 10.2% in the fabricated module, which is among the highest values in HH alloys. This work highlights enthalpy‐dominated microstructure reconfiguration as an effective pathway for developing high performance thermoelectric power generations.

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Publication Details

Journal
Advanced Energy Materials
Published
2026-04-01
DOI
https://doi.org/10.1002/aenm.70896
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Enthalpy‐Driven Microstructure Reconfiguration for High‐Performance Half‐Heusler Alloys

Z. Huang, Quanzheng Deng, Chongjian Zhou, Baohai Jia et al.
Advanced Energy Materials
Advanced Thermoelectric Materials and Devices
article

Enthalpy‐Driven Microstructure Reconfiguration for High‐Performance Half‐Heusler Alloys

Z. Huang, Quanzheng Deng, Chongjian Zhou, Baohai Jia, Zi Wang, Yue Wang, Qiqi Tang, XuSheng Liu, Binbin Jiang, Peng Li, Yuan Lin, Guang Yao, Ruiheng Liu
article en

Abstract

ABSTRACT Half‐Heusler (HH) alloys have attracted extensive attention due to their exceptional mechanical properties and high‐temperature thermal stability. However, simultaneously optimizing their power factor ( PF ) and figure of merit ( zT ) remains challenging due to the conflict of tuning electron and phonon behavior. Here, a microstructure reconfiguration strategy based on tuning the enthalpy‐dominated atomic chemical affinity is proposed to decouple electrical and thermal transport properties. The introduction of Yb into Hf‐doped ZrNiSn alloys weakens the d ‐ d orbital hybridization, which reduces the negative mixing enthalpy and diminishes the atomic affinity, thereby suppressing the formation of Hf precipitates. The Hf precipitates are transformed into superstructures, which promote the electron mobility with a 55% increase by eliminating the electron scattering around discontinuous lattices and introducing strong phonon scattering to suppres the thermal conductivity. Therefore, a “double‐high” Zr 0.66 Hf 0.3 Yb 0.04 NiSn 0.98 Sb 0.02 material with a high PF of 58 µW·cm − 1 ·K − 2 and a peak zT of 1.32 at 950 K was obtained, contributing to a high experimental conversion efficiency of 10.2% in the fabricated module, which is among the highest values in HH alloys. This work highlights enthalpy‐dominated microstructure reconfiguration as an effective pathway for developing high performance thermoelectric power generations.

Advanced Energy Materials
University of Electronic Science and Technology of China (CN), Northwestern Polytechnical University (CN), Southern University of Science and Technology (CN), Shenzhen Institutes of Advanced Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China, Shenzhen Science and Technology Innovation Program, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 29%
Advanced Thermoelectric Materials and Devices
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