In-fibre logic and memory via tuneable passivation–corrosion

Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion-cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in "AND" and "OR" logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.

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Publication Details

Journal
Nature Communications
Published
2026-03-31
DOI
https://doi.org/10.1038/s41467-026-71249-7
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

In-fibre logic and memory via tuneable passivation–corrosion

Carlo Menon, Y. Li, Alexander V. Shokurov, Manuel Reis Carneiro et al.
Nature Communications
Advanced Memory and Neural Computing
article

In-fibre logic and memory via tuneable passivation–corrosion

Carlo Menon, Y. Li, Alexander V. Shokurov, Manuel Reis Carneiro, Weifeng Yang
article en

Abstract

Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion-cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in "AND" and "OR" logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.

Nature Communications
ETH Zurich (CH)
National Science Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Eidgenössische Technische Hochschule Zürich
Openalex Percentile: Top 28%
Advanced Memory and Neural Computing
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In-fibre logic and memory via tuneable passivation–corrosion — Carlo Menon, Y. Li, et al. · Nature Communications (2026) | TGRS Research Map | TGRS