Spin‐Flip Upconversion Luminescence and Tunable Downshifting Near‐Infrared Emissions via 4 <i>d</i> ‐4 <i>f</i> Interaction in Doped Halide Perovskite

ABSTRACT The success of near‐infrared (NIR) to visible upconversion (UC) and NIR downshifting photoluminescence (PL) is mainly due to 4 f ‐4 f energy transfer (ET) interactions of lanthanide ion pairs. This concept was later extended to 3 d ‐4 f ion pairs, where Cr 3+ enabled UC PL via intra‐configurational spin‐flip (ICSF) transition. Interestingly, recent studies reveal that heavier transition‐metal ions such as Mo 3+ (4 d ) can exhibit multiple ICSF emissions spanning the NIR‐I and NIR‐II regions. This finding raises a key question: can a 4 d ‐4 f ion pair be designed to achieve multimode downshifting NIR and UC PL by combining f ‐ f and ICSF d ‐ d transitions? Herein, we report the first synthesis of Mo 3+ /Er 3+ ‐codoped Cs 2 NaInCl 6 double perovskite, exhibiting tunable NIR‐II downshifting emissions at 1095 nm (Mo 3+ ) and 1540 nm (Er 3+ ). Both emissions can be achieved by excitation of either Mo 3+ d ‐electrons or Er 3+ f ‐electrons through efficient 4 d ‐4 f ET, as established by temperature‐dependent (300–6.3 K) PL. Furthermore, this 4 d ‐4 f interaction enables the demonstration of two‐photon UC PL from Mo 3+ d ‐electrons at 700 nm upon Er 3+ f ‐electrons excitation at 980 nm. This finding establishes 4 d ‐4 f interaction as a strategy to simultaneously tune downshifting and UC pathways, opening a new opportunity to tailor optical and optoelectronic materials.

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Journal
Angewandte Chemie
Published
2026-04-01
DOI
https://doi.org/10.1002/ange.7420770
Primary Topic
Luminescence Properties of Advanced Materials
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article
Field-Weighted Citation Impact
0.00

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article

Spin‐Flip Upconversion Luminescence and Tunable Downshifting Near‐Infrared Emissions via 4 d ‐4 f Interaction in Doped Halide Perovskite

Diogo A. Gálico, Angshuman Nag, Sajid Saikia, Claudia Manuela Santos Calado et al.
Angewandte Chemie
Luminescence Properties of Advanced Materials
article

Spin‐Flip Upconversion Luminescence and Tunable Downshifting Near‐Infrared Emissions via 4 d ‐4 f Interaction in Doped Halide Perovskite

Diogo A. Gálico, Angshuman Nag, Sajid Saikia, Claudia Manuela Santos Calado, Muralee Murugesu, Animesh Ghosh
article en

Abstract

ABSTRACT The success of near‐infrared (NIR) to visible upconversion (UC) and NIR downshifting photoluminescence (PL) is mainly due to 4 f ‐4 f energy transfer (ET) interactions of lanthanide ion pairs. This concept was later extended to 3 d ‐4 f ion pairs, where Cr 3+ enabled UC PL via intra‐configurational spin‐flip (ICSF) transition. Interestingly, recent studies reveal that heavier transition‐metal ions such as Mo 3+ (4 d ) can exhibit multiple ICSF emissions spanning the NIR‐I and NIR‐II regions. This finding raises a key question: can a 4 d ‐4 f ion pair be designed to achieve multimode downshifting NIR and UC PL by combining f ‐ f and ICSF d ‐ d transitions? Herein, we report the first synthesis of Mo 3+ /Er 3+ ‐codoped Cs 2 NaInCl 6 double perovskite, exhibiting tunable NIR‐II downshifting emissions at 1095 nm (Mo 3+ ) and 1540 nm (Er 3+ ). Both emissions can be achieved by excitation of either Mo 3+ d ‐electrons or Er 3+ f ‐electrons through efficient 4 d ‐4 f ET, as established by temperature‐dependent (300–6.3 K) PL. Furthermore, this 4 d ‐4 f interaction enables the demonstration of two‐photon UC PL from Mo 3+ d ‐electrons at 700 nm upon Er 3+ f ‐electrons excitation at 980 nm. This finding establishes 4 d ‐4 f interaction as a strategy to simultaneously tune downshifting and UC pathways, opening a new opportunity to tailor optical and optoelectronic materials.

Angewandte ChemieVol. 138(20)
University of Ottawa (CA), University of Alberta (CA), Indian Institute of Science Education and Research Pune (IN)
University of Ottawa, Canada Foundation for Innovation, Department of Science and Technology, Ministry of Science and Technology, India, University Grants Commission
Affordable and clean energy
Openalex Percentile: Top 41%
Luminescence Properties of Advanced Materials
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