High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System
. These findings demonstrate that MBE-grown Ge films, possessing exceptionally high carrier mobility, hold great promise for integration into advanced electronic and optoelectronic devices.
Authors
- Ming Ming (ORCID: https://orcid.org/0000-0002-8178-7460)
- Jieyin Zhang
- X. P. Zhang
- Xin Geng (ORCID: https://orcid.org/0000-0001-6377-3308)
- Gancheng Ye
- Jianjun Zhang
- Yilin Chen
- Liangxin Liao
Institutions
- Sun Yat-sen University (CN)
- South China Normal University (CN)
- Songshan Lake Materials Laboratory (CN)
- Institute of Physics (CN)
Publication Details
- Journal
- Nanomaterials
- Published
- 2026-03-31
- DOI
- https://doi.org/10.3390/nano16070424
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Science and Technology Major Project
- National Key Research and Development Program of China