Comparative Analysis of Heat Dissipation Distribution in Double‐Sided Cooling Si‐IGBT and SiC‐MOSFET Power Semiconductor Modules

ABSTRACT A double‐sided cooling (DSC) power semiconductor module embedded with a silicon insulated gate bipolar transistor (Si‐IGBT) or silicon carbide metal‐oxide‐semiconductor field‐effect transistor (SiC‐MOSFET) was fabricated. Their heat dissipation distributions were compared, and the causes of the differences were analyzed. The thermal resistance of the indirect cooling DSC Si‐IGBT module was 0.121K/W. It was better than the single‐sided direct cooling module, which reported a thermal resistance of 0.139K/W. An indirect cooling DSC SiC‐MOSFET module with dispersed placement for the same package exhibited an almost equivalent thermal resistance of 0.124K/W, despite possessing a smaller die heat dissipation area owing to its higher current density. Si‐IGBT and SiC‐MOSFET reported 37.1% and 29.7% of the heat flux share from the die to the upper surface, respectively. It was clarified that the share is determined by the ratio of the spacer area on the surface side to the die active area on the backside.