Impact of Synthesis Temperature on the Structural, Electronic Structural, Optical, Magnetic, and Electrochemical Properties of SmFeO3 Nanoparticles

The multifunctional attributes of SmFeO3 make it a promising candidate for the current diverse technological applications. Therefore, in this work, we investigated the effect of synthesis temperature on the magnetic, optical and electrochemical properties of SmFeO3 nanoparticles at room temperature (SFO-RT) and 50 °C (SFO-50) when prepared through the co-precipitation method. The XRD analysis revealed two distinct phases: SmFeO3 and Sm2O3 as secondary with SmFeO3 emerging as the primary phase (88–93%). The FESEM images showed the amalgamated morphology of the nanoparticles indicating the enhanced thermal kinetics of the solution which not only limited the particle growth but also facilitated their coalition. The band gap energy was found to be 2.2 and 2.3 eV for SFO-RT and SFO-50, respectively, while the values of saturation magnetization noted were 2.14 and 1.53 emu/g for SFO-RT and SFO-50, respectively. The XPS analysis revealed Sm to be in a +3 oxidation state, while Fe was in a mixed (+3/+2) oxidation state showing an increase in the ionic concentration in SFO-50. From the electrochemical measurements, the highest specific capacitance was observed for SFO-50 (65.8 F/g) as compared to SFO-RT (49.3 F/g). The results indicate a clear effect of synthesis temperature on the properties of SmFeO3. Here, two factors played a prominent role: one was the morphology, shaped through the particle growth, and the other was the secondary phase. The decrease in the size of the agglomerated particles and phase fraction of the secondary phase brought about necessary changes in the structural attributes to reduce the saturation magnetization and enhance the specific capacitance of SFO-50. Overall, this study shows that the synthesis temperature affects the crystalline structure and phase fractions leading to the modulation of electronic structure, band gap, magnetic interactions and specific capacitance.