GeSeTe for Enhanced Thermal Stability and Reliability in Ovonic Threshold Switching Materials

cycles─even after high-temperature annealing at 400 °C. The enhanced comprehensive performance stems from the reinforced covalent bonding network resulting from higher Ge content, while excessive Ge leads to increased structural rigidity and the introduction of metastable defects. Additionally, the fabricated GeSeTe-based SOM cells achieve stable switching operations with a 0.9 V memory window, and we further reveal the phenomenon of electric-field-driven atomic segregation, which elucidates the underlying mechanism of the polarity-dependent switching behavior. These insights establish Ge content engineering as a critical pathway for the design of high-performance, thermally robust OTS selectors and next-generation SOM devices.