Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing
cycles, and retention projections consistent with decade-scale stability. Correlative four-dimensional scanning transmission electron microscopy phase mapping reveals an increased orthorhombic ferroelectric fraction following electrical wake-up at cryogenic temperatures, correlated with enhanced polarization stability and strengthened oxygen-metal coordination. We hypothesize that suppressed trapping-related instability, along with a higher orthorhombic phase, jointly contribute to this effect. Current-voltage sweeps define an operational design window, with memory-window saturation beyond ±5 V programming voltages and ≳900 ns pulse widths, consistent with nucleation-limited reversal kinetics in ultrathin films. A spiking neural network implemented at 10 K achieves >92% classification accuracy on MNIST and 73.8% accuracy on NMNIST data sets, demonstrating practical utility. These findings provide materials- and device-level insights into scaled hafnia FeFETs for energy-efficient cryogenic applications, including potential integration in quantum-classical systems.
Authors
- Gautham Kumar (ORCID: https://orcid.org/0000-0002-5095-3331)
- Yannick Raffel (ORCID: https://orcid.org/0000-0001-8629-5206)
- Sandip Lashkare (ORCID: https://orcid.org/0000-0003-2018-1681)
- Ankit Agarwal (ORCID: https://orcid.org/0000-0003-1663-0675)
- Darsen D. Lu (ORCID: https://orcid.org/0000-0002-1956-6093)
- Guilhem Larrieu (ORCID: https://orcid.org/0000-0001-5157-2277)
- Kuo-Hsing Kao (ORCID: https://orcid.org/0000-0003-0137-2466)
- Sourav De (ORCID: https://orcid.org/0000-0002-1930-8799)
- Asim Senapati
- Apu Das
- Jaskirat Singh Maskeen (ORCID: https://orcid.org/0009-0001-6781-8152)
- Agniva Paul
- Mohit Tewari
- Siddheswar Maikap
- Jonas Müller
- Min-Hung Lee
- Tarun Agarwal
- Zhao-Feng Lou
Institutions
- Semiconductor Research Corporation (US)
- National Taiwan University (TW)
- Chang Gung University (TW)
- Université Fédérale de Toulouse Midi-Pyrénées (FR)
- Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
- National Tsing Hua University (TW)
- Indian Institute of Technology Gandhinagar (IN)
- Fraunhofer Institute for Photonic Microsystems (DE)
- Institute of Electronics (BG)
- National Cheng Kung University (TW)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-03-31
- DOI
- https://doi.org/10.1021/acsnano.5c16255
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 11.21
Funders
- Arthritis National Research Foundation
- National Research Foundation
- Centre National de la Recherche Scientifique
- Thailand Science Research and Innovation
- National Science and Technology Council