Chemically Defined <i>Ln</i> <sub>2</sub> H <sub> 3– <i>x</i> </sub> N Nitride-Hydrides via High-Pressure Synthesis and Topochemical Hydrogen Intercalation

gas pressure after releasing the mechanical pressure, thereby driving a metal-semiconductor transition. This combination of high-pressure synthesis and post-synthetic topochemical intercalation provides a powerful yet underexplored route to access pressure-stabilized mixed-anion frameworks with precisely tunable anion stoichiometry. In addition, Nd and Gd analogues were synthesized at 8 GPa, and density functional theory calculations indicate that chemical pressure induced by lanthanide substitution systematically tunes the band structures from semiconducting to semimetallic regimes.

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Publication Details

Journal
Journal of the American Chemical Society
Published
2026-03-31
DOI
https://doi.org/10.1021/jacs.6c02443
Primary Topic
Inorganic Chemistry and Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Chemically Defined Ln 2 H 3– x N Nitride-Hydrides via High-Pressure Synthesis and Topochemical Hydrogen Intercalation

Hiroki Ubukata, Hiroshi Takatsu, Cédric Tassel, Hiroshi Kageyama et al.
Journal of the American Chemical Society
Inorganic Chemistry and Materials
article

Chemically Defined Ln 2 H 3– x N Nitride-Hydrides via High-Pressure Synthesis and Topochemical Hydrogen Intercalation

Hiroki Ubukata, Hiroshi Takatsu, Cédric Tassel, Hiroshi Kageyama, Daichi Kato, Kantaro Murayama, Yu Cao, Tong Zhu, Zefeng Wei
article en

Abstract

gas pressure after releasing the mechanical pressure, thereby driving a metal-semiconductor transition. This combination of high-pressure synthesis and post-synthetic topochemical intercalation provides a powerful yet underexplored route to access pressure-stabilized mixed-anion frameworks with precisely tunable anion stoichiometry. In addition, Nd and Gd analogues were synthesized at 8 GPa, and density functional theory calculations indicate that chemical pressure induced by lanthanide substitution systematically tunes the band structures from semiconducting to semimetallic regimes.

Journal of the American Chemical SocietyVol. 148(13)
Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Kyoto University (JP), Institut de Chimie de la Matière Condensée de Bordeaux (FR), Institut Polytechnique de Bordeaux (FR)
New Energy and Industrial Technology Development Organization, Japan Society for the Promotion of Science, Japan Science and Technology Agency
Openalex Percentile: Top 40%
Inorganic Chemistry and Materials
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