Molecular Insights into Oxime-Containing Group 4 Transition Metal Precursors for Atomic Layer Deposition
is a potential precursor that can modulate defect density and phase structure of thin films by controlling the deposition temperature. We also compared the ALD behaviors between amidoxime complexes and oxime complexes and observed the functional group effects on surface adsorption.
Authors
- Ji Woon Choi (ORCID: https://orcid.org/0000-0002-5851-2653)
- Ji Yeon Ryu (ORCID: https://orcid.org/0000-0001-6321-5576)
- Bo Keun Park (ORCID: https://orcid.org/0000-0002-4066-0500)
- Junseong Lee (ORCID: https://orcid.org/0000-0002-5004-7865)
- Seungjin Song
- Taek-Mo Chung
- Sung Kwang Lee
Institutions
- Chonnam National University (KR)
- Korea Research Institute of Chemical Technology (KR)
- Korea University of Science and Technology (KR)
Publication Details
- Journal
- Inorganic Chemistry
- Published
- 2026-03-31
- DOI
- https://doi.org/10.1021/acs.inorgchem.5c04097
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Korea Research Institute of Chemical Technology