Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors.

Publication Details

Journal
Apollo (University of Cambridge)
Published
2025-04-25
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors.

Apollo (University of Cambridge)
Ferroelectric and Negative Capacitance Devices
article

Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors.

article en

Abstract

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Apollo (University of Cambridge)
Affordable and clean energy
Openalex Percentile: Top 32%
Ferroelectric and Negative Capacitance Devices
OpenAlex
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Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors. · Apollo (University of Cambridge) (2025) | TGRS Research Map | TGRS