Tailoring the Atomic‐Level Defect‐Assisted Electronic Properties of MoS ₂ Thin Films via Low‐Energy Au Ion Implantation

Two‐dimensional MoS 2 has garnered significant attention for its promising electronic and optoelectronic properties; however, controlled tuning of its structural and functional characteristics remains a key challenge. Ion implantation offers a potential route for atomic‐scale defect engineering. Its precise effect on MoS 2 thin films is still unclear. In the present study, the effects of 70 KeV Au ion implantation at fluences of 1 × 10 13 and 2 × 10 13 ions cm −2 on the atomic‐scale defect‐assisted electronic behavior of MoS 2 thin films are investigated. The Au ion implantation is shown to effectively tune this property. For instance, at a moderate fluence, i.e., 1 × 10 13 ions cm −2 , increased defect density leads to reduced crystallinity, enhanced conducting behavior, and lower surface roughness. Increasing the fluence to 2 × 10 13 ions·cm −2 may induce partial transformation or phase coexistence (2H or 1T) and slightly lower conducting. Further, the defect‐induced modifications influence excitonic behavior and strain effects. By considering ion implantation as an efficient tools, these findings demonstrate that the moderately implanted sample is highly promising for high‐performance applications in nanoelectronics and optoelectronics devices, such as field‐effect transistors (FET).