A Precision‐Improved Bootstrap Sampling Switch for All‐N‐Type IZO TFTs Using Charge Injection Cancellation Technology

ABSTRACT This letter proposes a precision‐improved sampling switch that requires only two additional transistors and one inverter, with all devices implemented using N ‐type transistors. The design introduces a source‐drain shorted dummy transistor to compensate for or cancel out the charge injection from the main switch and incorporates an additional discharge switch to suppress charge leakage and switch soft conduction phenomena. Based on a 7 µm channel length IZO TFT process, simulation results demonstrate that the proposed switch achieves 0–10 V full‐swing input and output under VDD = 10 V and a sampling rate of 20 kHz, the proposed switch achieves a 0–10 V full‐swing input and output. At an input signal frequency of 107.42 Hz, the SNDR reaches 77.98 dB and the SFDR is improved by 33.36 dB. This design offers an effective approach to improve the sampling accuracy of TFT integrated circuits.