Highly Efficient Cadmium‐Free Kesterite Solar Cell With the Lowest <i>V</i> <sub>OC,def</sub> Enabled by Na‐Ion‐Assisted Defect Passivation
ABSTRACT Cadmium (Cd)‐free Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells are primarily constrained by a severe open‐circuit voltage deficit ( V OC,def ), arising from Cu Zn antisite defects and interfacial nonradiative recombination pathways that are difficult to suppress through bulk defect regulation alone. A major practical bottleneck is the lack of a controllable, scalable approach to regulate sodium (Na) in the defect‐rich near‐surface region. Here, we introduce a crystallization‐coupled Na treatment based on a solution‐processable NaCl–MOE surface treatment that enables controllable, surface‐confined Na incorporation. During selenization, the surface‐confined Na is activated and coupled to grain growth, leading to suppression of antisite‐related recombination pathways and a reduced interfacial defect density. This strategy suppresses band‐tail states and nonradiative recombination, driving a shift from interface‐dominated to bulk‐dominated recombination. As a result, Na‐treated devices exhibit reduced defect densities, moderated band bending, prolonged carrier lifetime, increased diffusion length, and overall improved carrier management. Consequently, the lowest open‐circuit voltage deficit ( V OC,def ) of 0.316 V and a power conversion efficiency (PCE) of 13.71% are achieved, placing this Cd‐free CZTSSe/ZTO device among the top‐performing Cd‐free kesterite solar cells reported so far. This work establishes surface‐initiated, crystallization‐assisted alkali regulation as an effective and scalable route to mitigate the V OC,def .
Authors
- Gengchiau Liang (ORCID: https://orcid.org/0000-0002-9354-6509)
- S. S. Wang
- Yonggang Zhao (ORCID: https://orcid.org/0000-0003-2224-7269)
- Xi Zhang (ORCID: https://orcid.org/0000-0002-4638-3997)
- Hongli Ma (ORCID: https://orcid.org/0000-0003-3034-5862)
- Muhammad Abbas
- Shuo Chen
- Yun Zhao
- Jia Yang
- Jun Zhao
Institutions
- Kunming University of Science and Technology (CN)
- Yunnan Normal University (CN)
- Centre National de la Recherche Scientifique (FR)
- Shenzhen University (CN)
- Institut des Sciences Chimiques de Rennes (FR)
- Northwest Normal University (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2026-03-27
- DOI
- https://doi.org/10.1002/adfm.202600054
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00