Analysis of the Behavior of Ag/Mg3N2/p-Si Schottky Diodes Based on Impedance and Dielectric Properties

Abstract This study evaluates the effect of the Mg 3 N 2 interlayer on interface characteristics by investigating the electrical, impedance, and dielectric properties of Ag/Mg 3 N 2 /p-Si Schottky diodes. The study specifically aims to reveal the interface trap density ( N ss ), series resistance ( R s ), and frequency-dependent behavior of the dielectric response. The Mg 3 N 2 thin film was deposited on a p-type Si substrate using the thermal evaporation method. Electrical characterizations were performed at room temperature and in the dark; capacitance ( C - V ) and conductance ( G/ω - V ) measurements were taken in the 10 kHz–5 MHz frequency range. The N ss was calculated using the Hill-Coleman method, while the complex dielectric constant ( ε′ , ε″ ), loss factor ( tanδ ), electrical modulus ( M′ , M″ ), and AC conductivity ( σ AC ) were calculated using standard formulations. The ε ′, ε ″, tan δ , M′ , M″ , and σ AC values were determined to be 6.91, 7.43, 1.07, 0.06, 0.07 and 4.13 × 10 -6 Ω -1 .cm -1 at high frequency (1 MHz) and high voltage (+ 3 V), while the N ss value was on the order of 10 13 eV -1 ·cm -2 . The study provides important insights into understanding the impact of the Mg 3 N 2 interlayer on SD performance and highlights the potential contributions of such interlayer engineering in electronic device designs.