Reversible Magneto-ionic Modification of Metallic Magnetic Thin Films

Magnetic multilayers with structural inversion asymmetry, perpendicular magnetic anisotropy (PMA), and large Dzyaloshinskii-Moriya interaction (DMI) are widely studied for magnetic domain wall- and skyrmion-based data processing applications. In this work, we report a controlled, nonvolatile, but reversible local modification of such a system by electrically driven oxygen migration through the metallic film structure by using ionic liquid gating. Our findings provide direct evidence for the modification of the oxidation state at the heavy metal (HM)/ferromagnet (FM) interface. As a result, we observed changes in fundamental magnetic properties, such as an increase in the effective anisotropy constant (Keff) and coercive field (Hc) with oxidation, and a decrease with the reduction of oxygen ions. Positive gate voltages relative to the thin film extract oxygen ions from the magnetic layer, significantly reducing the domain nucleation field. In contrast, negative voltages drive oxygen ions into the magnetic layer, leading to a reversible increase in the extent of domain wall pinning near saturation. We observe a corresponding decrease in the magnetic moment and DMI, with negative voltage reducing both. This magneto-ionic modulation in fully metallic structures is beneficial for spintronic device applications, particularly in field-programmable domain wall and skyrmion devices.