High Light Output Power Density AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes

Compared with mercury lamps, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) possess many distinctive advantages, including their being pollution-free, their long lifespan, their low operating voltage, their compact size, and their high-frequency modulation capability. However, poor light extraction efficiency (LEE) and inhomogeneous current spreading hinder their wider application in fields such as sterilization, disinfection, and non-line-of-sight solar-blind communication. To solve the issues above, high light output power (LOP) density AlGaN-based DUV micro-light-emitting diodes (Micro-LEDs) were fabricated in this work. The Micro-LED, with a peak emission wavelength of 281 nm, exhibited a 605% enhancement in peak LOP density of up to 77.1 W/cm2 at a high current density of 2.3 kA/cm2 compared to conventional DUV LEDs. Meanwhile, the LEE of the TE-polarized light of the Micro-LED was improved by 68%, which benefited from the small-size effect, and the peak external quantum efficiency (EQE) of the Micro-LED was enhanced by 24.6%. Moreover, the Micro-LED also showed a lower leakage current. This work provides an effective strategy to improve the efficiency characteristics of DUV Micro-LEDs.

Authors

Institutions

Publication Details

Journal
Coatings
Published
2026-03-27
DOI
https://doi.org/10.3390/coatings16040408
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

High Light Output Power Density AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes

Tang Liang, Xinyu Wang, Mingfeng Gong, Xuejiao Sun et al.
Coatings
GaN-based semiconductor devices and materials
article

High Light Output Power Density AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes

Tang Liang, Xinyu Wang, Mingfeng Gong, Xuejiao Sun, Sijia Wu, Rongxin Zhang, Jinmin Li, Xuecheng Wei, Jianchang Yan, Tong Zhang, Cheng Lei, Naixin Liu, Junxi Wang
article en

Abstract

Compared with mercury lamps, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) possess many distinctive advantages, including their being pollution-free, their long lifespan, their low operating voltage, their compact size, and their high-frequency modulation capability. However, poor light extraction efficiency (LEE) and inhomogeneous current spreading hinder their wider application in fields such as sterilization, disinfection, and non-line-of-sight solar-blind communication. To solve the issues above, high light output power (LOP) density AlGaN-based DUV micro-light-emitting diodes (Micro-LEDs) were fabricated in this work. The Micro-LED, with a peak emission wavelength of 281 nm, exhibited a 605% enhancement in peak LOP density of up to 77.1 W/cm2 at a high current density of 2.3 kA/cm2 compared to conventional DUV LEDs. Meanwhile, the LEE of the TE-polarized light of the Micro-LED was improved by 68%, which benefited from the small-size effect, and the peak external quantum efficiency (EQE) of the Micro-LED was enhanced by 24.6%. Moreover, the Micro-LED also showed a lower leakage current. This work provides an effective strategy to improve the efficiency characteristics of DUV Micro-LEDs.

CoatingsVol. 16(4)
North University of China (CN), Chinese Academy of Sciences (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN), Taiyuan University of Technology (CN)
Openalex Percentile: Top 5%
GaN-based semiconductor devices and materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.