High Light Output Power Density AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes
Compared with mercury lamps, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) possess many distinctive advantages, including their being pollution-free, their long lifespan, their low operating voltage, their compact size, and their high-frequency modulation capability. However, poor light extraction efficiency (LEE) and inhomogeneous current spreading hinder their wider application in fields such as sterilization, disinfection, and non-line-of-sight solar-blind communication. To solve the issues above, high light output power (LOP) density AlGaN-based DUV micro-light-emitting diodes (Micro-LEDs) were fabricated in this work. The Micro-LED, with a peak emission wavelength of 281 nm, exhibited a 605% enhancement in peak LOP density of up to 77.1 W/cm2 at a high current density of 2.3 kA/cm2 compared to conventional DUV LEDs. Meanwhile, the LEE of the TE-polarized light of the Micro-LED was improved by 68%, which benefited from the small-size effect, and the peak external quantum efficiency (EQE) of the Micro-LED was enhanced by 24.6%. Moreover, the Micro-LED also showed a lower leakage current. This work provides an effective strategy to improve the efficiency characteristics of DUV Micro-LEDs.
Authors
- Tang Liang
- Xinyu Wang (ORCID: https://orcid.org/0000-0003-4301-2709)
- Mingfeng Gong
- Xuejiao Sun
- Sijia Wu
- Rongxin Zhang
- Jinmin Li
- Xuecheng Wei
- Jianchang Yan
- Tong Zhang
- Cheng Lei
- Naixin Liu
- Junxi Wang
Institutions
- North University of China (CN)
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
- Taiyuan University of Technology (CN)
Publication Details
- Journal
- Coatings
- Published
- 2026-03-27
- DOI
- https://doi.org/10.3390/coatings16040408
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00