SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

ABSTRACT Cryogenic memristors based on the high‐temperature superconductor offer significant potential as nonvolatile memory elements or unit cell for analog artificial neural networks for future applications such as control units for quantum processors, cryogenic data centers or space‐related electronics. In this work, the experimental switching capabilities of cuprate‐based memristors are analyzed in terms of the material‐specific physics. This work investigates the experimental switching behavior of cuprate‐based memristors across temperatures from cryogenic to room temperature. The underlying interpretation, namely the trapping of injected charge carriers at a metal interface and field‐induced detrapping, is incorporated into a physically inspired compact model. The core equations of this model consist of a differential balance equation and a current equation, which is derived from space‐charge limited conduction. Comparison with experimental data shows that the model successfully reproduces the key features of the measured switching behavior across a wide temperature range, spanning from 80 to 300 K. Additionally, we implement the model in SPICE, enabling circuit‐level simulations. The resulting compact model provides a useful framework for guiding experimental studies, capturing key features of the switching behavior, and bridging the gap between device‐level characterization and circuit‐level design.