Low Frequency Noise Spectroscopy of GaAsBi QW Structures for NIR Light Sources
Low frequency (10 Hz – 100 kHz) noise characteristics of GaAsBi quantum wells (QWs) based light-emitting diodes were investigated over the temperature range 159 K - 320 K. 1/f, 1/f α , and Lorentzian type components make up the low frequency noise spectra of the investigated structures. Noise spectroscopy revealed that the investigated GaAsBi QW structures, possibly due to lower growth temperature, contain defects that redistribute current out of the diode's active region.
Authors
- M. Kamarauskas
- B. Cechavicius
- S. Pralgauskaite
- I. Pliateryte
- A. Biciunas
- J. Glemza
- R. Butkute
- A. Spokas
- J. Matukas
- A. Zelioli
- L. Dundulis
Institutions
- Twitter (United States) (US)
Publication Details
- Journal
- Fluctuation and Noise Letters
- Published
- 2026-03-26
- DOI
- https://doi.org/10.1142/s0219477526400043
- Primary Topic
- Spectroscopy and Laser Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00