Influence of the Ge–Chalcogenide Active Layer on Electrical Conduction in Self-Directed Channel Memristors

The self-directed channel (SDC) class of memristors employs a multilayer architecture that is designed to enable robust Ag ion conduction, long cycling lifetime, and thermal stability. While several layers contribute to mechanical and chemical reliability, two layers primarily govern the electrical behavior: the amorphous Ge–chalcogenide active layer that is adjacent to the bottom electrode and the overlying metal–chalcogenide source layer. In this work, we investigate how the variation in the chalcogen species in these two layers influences switching characteristics in the pre-write regime, both in the pristine state and after a write/erase cycle, as well as the conduction behavior at room temperature. The devices were fabricated using Ge-rich chalcogenides containing O, S, Se, or Te, combined with SnS, SnSe, or Ag2Se metal–chalcogenide layers. The DC current-voltage measurements were analyzed using the standard linearization approaches to examine whether the transport behavior in the pre-write regime exhibits characteristics that are associated with Ohmic, Schottky, Poole–Frenkel, or space charge limited conduction. These measurements specifically probe the pre-write region of the I-V curve, where early ionic redistribution and structural rearrangement precede the abrupt formation of the conductive channels responsible for the resistive switching. The results show that the chalcogen composition strongly affects the threshold voltage, the resistance window, and the onset of field-enhanced transport, reflecting the differences in ionic distribution and channel formation dynamics. The results indicate that transport evolves with a bias and a compliance current, transitioning between regimes that are influenced by the interface injection and bulk-limited conduction, depending on the material stack. These findings clarify the role of chalcogen chemistry in governing the SDC switching behavior and provide guidance for the material selection in application-specific device design.