High-temperature memristors enabled by interfacial engineering

Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO<sub>x</sub>/tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10<sup>3</sup>, data retention >50 hours and endurance >10<sup>9</sup> switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO<sub>x</sub>/W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO<sub>X</sub>/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.

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Publication Details

Journal
Science
Published
2026-03-26
DOI
https://doi.org/10.1126/science.aeb9934
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

High-temperature memristors enabled by interfacial engineering

Kohei Shimamura, Cameron S. Jorgensen, K. Mahalingam, Priya D. Vashishta et al.
Science
Advanced Memory and Neural Computing
article

High-temperature memristors enabled by interfacial engineering

Kohei Shimamura, Cameron S. Jorgensen, K. Mahalingam, Priya D. Vashishta, Fuyuki Shimojo, Wataru Sugimoto, Sabyasachi Ganguli, Y.-H Xu, J. L. Zhao, Ajit K. Roy, Kai Ito, Han-Ting Liao, Qiangfei Xia, Ruoyu Zhao, Aiichiro Nakano, Seung Ju Kim, Ning Ge, Cynthia Bowers, J. Joshua Yang, Rajiv K. Kalia, Miao Hu, R. Stanley Williams
article en

Abstract

Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO<sub>x</sub>/tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10<sup>3</sup>, data retention >50 hours and endurance >10<sup>9</sup> switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO<sub>x</sub>/W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO<sub>X</sub>/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.

Science
University of Southern California (US), United States Air Force Research Laboratory (US), University of Massachusetts Amherst (US), Kumamoto University (JP)
Openalex Percentile: Top 7%
Advanced Memory and Neural Computing
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