Progress report on wide bandgap oxide semiconductor device modelling

Wide-bandgap semiconductor materials have emerged as key candidates for electronic and optoelectronic devices operating under high power, high frequency, and harsh environmental conditions [1,2]. In this progress report, we present our recent numerical investigations of band structure and transport in wide-bandgap semiconductor devices, with a particular focus on ZnO and Ga₂O₃ material systems [3-5]. Depolarisation shift is included in the optical absorption coefficient calculations. The presented results summarise current modelling capabilities and outline future directions to improve predictive accuracy, thereby supporting the design and optimisation of wide-bandgap semiconductor devices.