Multilayer Graphene‐Based Memristors in a Circuit Simulating a Neural Membrane

In this work, the goal is to emulate the behavior of the neuronal membrane using graphene‐based memristors. These devices exhibit a nonlinear pattern when under a varying potential difference. Memristors were manufactured based on a graphene layer with bottom contact made of indium tin oxynitride (ITON) and top contact made of aluminum. ITON is a transparent material with a wide bandgap. This oxynitride was obtained by evaporation and annealing in a conventional oven with nitrogen flow and three different temperatures. The three devices were electrically characterized to obtain important processes such as SET and RESET. It was observed that memristors present threshold switching. The devices were tested in association with a RC circuit that emulates the behavior of the neuronal membrane. It was noted that the behavior became nonlinear and could emulate the interference of an external element in the behavior of the action potential.