The Optoelectronic Characterization of Ag doped ZnO Thin Films

This study investigates the properties of silver (Ag)-doped zinc oxide (ZnO) thin films, which possess significant potential for various optoelectronic applications. The films were fabricated utilizing a cost-effective nebulizer spray technique. Structural analysis confirmed that both the undoped and Ag-doped samples crystallized in the hexagonal wurtzite phase, characteristic of ZnO. Scanning electron microscopy (SEM) revealed that the incorporation of Ag significantly altered the surface morphology, resulting in an increased grain size and the formation of more irregular surface features. Optical measurements demonstrated that while Ag doping slightly reduced the films' transmittance, it concurrently narrowed the optical band gap, thereby enhancing light absorption within the visible region. Moreover, the photoluminescence characteristics were observed to be strongly dependent on the presence of the silver dopant. Finally, current-voltage (I-V) characterization affirmed that the Ag-doped ZnO films exhibited superior photoconductivity compared to their undoped counterparts. An evaluation of the photodetector performance parameters indicated a substantial improvement in photosensitivity, which increased from a value of 14.7 in undoped ZnO to 64.2 following the incorporation of Ag.