High Mobility (&gt;200 cm <sup>2</sup> V <sup>−1</sup> s <sup>−1</sup> ) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

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Publication Details

Journal
Advanced Electronic Materials
Published
2026-03-23
DOI
https://doi.org/10.1002/aelm.202500696
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

High Mobility (>200 cm 2 V −1 s −1 ) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Jae Kyeong Jeong, Eunsuk Choi, Hyeonjeong Sun, Seung‐Beck Lee et al.
Advanced Electronic Materials
Thin-Film Transistor Technologies
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High Mobility (>200 cm 2 V −1 s −1 ) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Jae Kyeong Jeong, Eunsuk Choi, Hyeonjeong Sun, Seung‐Beck Lee, Jiyoung Bang, Sang H. Choi, Kyubin Hwang, Yeoeun Yun, Seungjae Lee, Taeyang Kim, Suhwon Choi
article en

Abstract

No abstract available for this paper.
Advanced Electronic Materials
Hanyang University (KR)
Affordable and clean energy
Openalex Percentile: Top 11%
Thin-Film Transistor Technologies
DOIOpen Access PDFOpenAlex
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