Certain Features of Thermal Deposition of Golden Films onto Mesoporous Silicon

Structural-morphological and chemical features of composite nanostructures obtained by vacuum-thermal gold deposition onto mesoporous silicon are studied in the work. Using scanning electron microscopy (SEM) atomic-force microscopy (AFM), IR Fourier spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) it was determined that deposition of gold resulted in formation of thin metal film (~200 nm), reproducing morphology of the porous silicon without its destruction. Partial penetration of gold into the pores was observed along with the conservation of its metal state (Au0) without formation of its chemical bonds with silicon. The obtained por-Si/Au heterostructures demonstrate a combination of the developed surface and chemical stability, that seems to be prospective for creation high-sensitive sensor devices.

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Publication Details

Journal
Russian Microelectronics
Published
2025-12-01
DOI
https://doi.org/10.1134/s1063739725601134
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
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article

Certain Features of Thermal Deposition of Golden Films onto Mesoporous Silicon

S. S. Chernenko, A. I. Chukavin, K.B. Kim, A. N. Lukin et al.
Russian Microelectronics
Silicon Nanostructures and Photoluminescence
article

Certain Features of Thermal Deposition of Golden Films onto Mesoporous Silicon

S. S. Chernenko, A. I. Chukavin, K.B. Kim, A. N. Lukin, A. S. Len’shin, S. I. Niftaliev, M. V. Grechkina
article en

Abstract

Structural-morphological and chemical features of composite nanostructures obtained by vacuum-thermal gold deposition onto mesoporous silicon are studied in the work. Using scanning electron microscopy (SEM) atomic-force microscopy (AFM), IR Fourier spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) it was determined that deposition of gold resulted in formation of thin metal film (~200 nm), reproducing morphology of the porous silicon without its destruction. Partial penetration of gold into the pores was observed along with the conservation of its metal state (Au0) without formation of its chemical bonds with silicon. The obtained por-Si/Au heterostructures demonstrate a combination of the developed surface and chemical stability, that seems to be prospective for creation high-sensitive sensor devices.

Russian MicroelectronicsVol. 54(8)
Voronezh State University of Engineering Technologies (RU), Udmurt Federal Research Center, Ural Branch of the Russian Academy of Sciences (RU), Voronezh State University (RU)
Openalex Percentile: Top 43%
Silicon Nanostructures and Photoluminescence
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