State Control and Measurement System for Semiconductor Quantum Dots Qubits

In this research we theoretically investigate the impact of microwave control pulse shape, duration, and amplitude on the hole spin qubit state of the gate-induced SOI-based quantum dot in silicon nanowire. For our research we used two kinds of 3D models: single plunger gate system and triple gate system with two tunnel barrier gates and single plunger gate. The time-dependent Schrödinger equation is solved via 3D single-particle eigenfunction expansion to obtain state populations for arbitrary waveforms. To ground the analysis in the conditions of real devices, we study quantum dot state transitions under a 0–250 ns-long microwave pulses while sweeping detuning in a 100 MHz scale and drive amplitudes from 0 to 40 $${{\mu V}}$$ . In single-gate system our calculations show a wide-range Rabi rate tuning (20–80 MHz) by means of drive amplitude adjustment (5–40 $${{\mu V}}$$ ). In three-gate system, the Rabi rate can be tuned in the range of 530–160 MHz by adjusting the relative phase between plunger and tunnel gate control pulses from $$0^\circ $$ to $$180^\circ $$ , respectively. This approach is valuable due to its generality across waveform shapes and its applicability for optimizing device parameters and validating control protocols with machine learning, which can noticeably improve the precision of quantum state manipulations in silicon spin hole qubits and optimize the operational efficiency of control and readout systems.